logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12426325 B1

PDFFull Text
Date of Patent:
Sep. 23, 2025

Filed:

Jun. 28, 2024

Semiconductor device structure with nanostructure

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Sai-Hooi Yeong, Zhubei, TW;

Bo-Feng Young, Taipei, TW;

Ching-Wei Tsai, Hsinchu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;

Attorney:

Birch, Stewart, Kolasch & Birch, LLP

Primary Examiner:

Tong-Ho Kim

Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/786 (2006.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01); H10D 30/69 (2025.01); H10D 62/10 (2025.01); H10D 64/01 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/83 (2025.01);
U.S. Cl.
CPC ...
H10D 62/121 (2025.01); H10D 30/014 (2025.01); H10D 30/031 (2025.01); H10D 30/6713 (2025.01); H10D 30/6729 (2025.01); H10D 30/6735 (2025.01); H10D 30/794 (2025.01); H10D 64/01 (2025.01); H10D 84/013 (2025.01); H10D 84/038 (2025.01); H10D 84/83 (2025.01);
Abstract

A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a first nanostructure over the substrate. The semiconductor device structure also includes a gate stack over the substrate and surrounding the first nanostructure and a first source/drain layer surrounding the first nanostructure and adjacent to the gate stack. The semiconductor device structure further includes a contact structure surrounding the first source/drain layer. A first portion of the contact structure is between the first nanostructure and the substrate, and the first portion of the contact structure has a first curved top surface facing the first nanostructure.

Find Patent Forward Citations

Loading…