The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 23, 2025

Filed:

Feb. 22, 2024
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Shih-Wei Peng, Hsinchu, TW;

Te-Hsin Chiu, Hsinchu, TW;

Jiann-Tyng Tzeng, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 62/10 (2025.01); H01L 23/522 (2006.01); H01L 25/11 (2006.01); H10D 30/67 (2025.01);
U.S. Cl.
CPC ...
H10D 62/121 (2025.01); H01L 23/5226 (2013.01); H01L 25/115 (2013.01); H10D 30/6713 (2025.01); H10D 30/6735 (2025.01); H10D 62/115 (2025.01);
Abstract

A semiconductor device including vertical transistors with a back side power structure, and methods of making the same are described. In one example, a described semiconductor structure includes: a gate structure including a gate pad and a gate contact on the gate pad; a first source region disposed below the gate pad; a first drain region disposed on the gate pad, wherein the first source region, the first drain region and the gate structure form a first transistor; a second source region disposed below the gate pad; a second drain region disposed on the gate pad, wherein the second source region, the second drain region and the gate structure form a second transistor; and at least one metal line that is below the first source region and the second source region, and is electrically connected to at least one power supply.


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