The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 23, 2025

Filed:

Jul. 29, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Wei-Yu Chou, Taichung, TW;

Yang-Che Chen, Hsin-Chu, TW;

Yi-Lun Yang, Taoyuan, TW;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 1/00 (2025.01); H10D 1/20 (2025.01);
U.S. Cl.
CPC ...
H10D 1/20 (2025.01);
Abstract

A semiconductor structure includes a recess extending into a substrate and an inductor device including a first isolation layer, a first magnetic layer over the first isolation layer, a second isolation layer over the first magnetic layer, and a conductive element surrounded by the second isolation layer, wherein at least a portion of the inductor device is disposed within the recess. A method of manufacturing a semiconductor structure includes disposing a first isolation layer on a surface of a substrate and extending into a recess formed on the surface; disposing a first magnetic layer over the first isolation layer; disposing a second isolation layer over the first magnetic layer to form a trench; disposing a conductive element in the trench; disposing a third isolation layer over the first magnetic layer, the conductive element and the second isolation layer; and disposing a second magnetic layer over the third isolation layer.


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