The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2025
Filed:
Sep. 27, 2022
Changxin Memory Technologies, Inc., Hefei, CN;
Yulei Wu, Hefei, CN;
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Abstract
The present disclosure provides a method of forming a capacitor hole, and a semiconductor structure. The method includes: providing a substrate, where an electrode is formed in the substrate; forming a pattern definition layer on a surface of the substrate; sequentially forming three sets of trenches in the pattern definition layer, where the three sets of trenches intersect with each other at 120°, and a hexagonal hole is formed at an intersection position in the pattern definition layer; etching the substrate along the hexagonal hole by the pattern definition layer as a mask, to form a capacitor hole in the substrate, where a bottom of the capacitor hole is round under a loading effect of etching, and the electrode is exposed at the bottom of the capacitor hole.