The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2025
Filed:
Jun. 02, 2022
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Yu-Chao Lin, Hsinchu, TW;
Tung-Ying Lee, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 63/00 (2023.01); H01L 23/528 (2006.01); H10N 70/00 (2023.01);
U.S. Cl.
CPC ...
H10B 63/24 (2023.02); H01L 23/5283 (2013.01); H10N 70/063 (2023.02); H10N 70/841 (2023.02);
Abstract
Provided is a memory cell including a selector disposed over a substrate, a memory element and a connecting pad. The selector includes a bottom electrode, an ovonic threshold switch layer on the bottom electrode, an inter-electrode over the ovonic threshold switch layer, and an intermediate layer between the ovonic threshold switch layer and the inter-electrode. The memory element is disposed on the selector. The connecting pad is disposed on the memory element.