The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2025
Filed:
Jun. 02, 2022
Changxin Memory Technologies, Inc., Hefei, CN;
Xiang Liu, Hefei, CN;
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Abstract
The embodiments of the disclosure provide a semiconductor structure and a method for forming the same. The method includes that: a substrate is provided; bit line contact holes arranged at intervals, a bit line contact in partial contact with the bit line contact hole and a bit line structure are formed on the substrate; a first insulating layer is formed on surfaces of the substrate, the bit line contact hole, the bit line contact and the bit line structure, the first insulating layer not completely filling the bit line contact holes; a second insulating layer is formed on a surface of the first insulating layer located on the surface of the bit line contact and part of the surface of the bit line structure; and a third insulating layer covering the first insulating layer and the second insulating layer is formed.