The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2025
Filed:
Jun. 17, 2022
Applicant:
Changxin Memory Technologies, Inc., Hefei, CN;
Inventor:
Jingwen Lu, Hefei, CN;
Assignee:
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/34 (2023.02); H10B 12/053 (2023.02);
Abstract
A method for manufacturing a semiconductor structure includes operations as follows. First mask pattern layers spaced apart on a base are formed. A first dielectric layer is deposited between the first mask pattern layers. The first dielectric layer is etched to form a first trench, the first trench exposing the base and a part of side walls of the first mask pattern layers. The base is etched to a first depth along the first trench, to expose the base under the first mask pattern layers. The base under the first mask pattern layers is etched to form gaps in the base.