The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2025
Filed:
Dec. 28, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Kyungwook Park, Pohang-si, KR;
Sangmin Kang, Hwaseong-si, KR;
Yoongoo Kang, Hwaseong-si, KR;
Changwoo Seo, Hwaseong-si, KR;
Suyoun Song, Hwaseong-si, KR;
Dain Lee, Hwaseong-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor device may include contact plug structures on a substrate, and an insulation structure filling a space between the contact plug structures to insulate the contact plug structures from each other. The contact plug structures may be spaced apart from each other in a first direction. The insulation structure may include a first insulation pattern and a second insulation pattern. The second insulation pattern may include an insulation material having an etch selectivity with respect to silicon oxide. The first insulation pattern may contact a portion of sidewalls of the second insulation pattern and a portion of sidewalls of the contact plug structure. The first insulation pattern may include a material having a band gap higher than a band gap of the second insulation pattern.