The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2025
Filed:
Jan. 18, 2023
Changxin Memory Technologies, Inc., Hefei, CN;
Youming Liu, Hefei, CN;
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Abstract
A method for forming a semiconductor structure includes the following operations. A substrate is provided. The substrate includes double heterostructures arrayed along a first direction and a second direction. Each of the double heterostructures includes a first semiconductor layer, a second semiconductor layer and another first semiconductor layer sequentially arranged along the first direction. A forbidden band gap of the first semiconductor layer is different from a forbidden band gap of the second semiconductor layer. The first direction is perpendicular to the second direction, and both the first direction and the second direction are parallel to a direction of a plane where the substrate is located. A double gate structure is formed on sidewalls of each of the double heterostructures along the first direction.