The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 23, 2025

Filed:

Jul. 31, 2023
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Feng-Wei Kuo, Zhudong Township, TW;

Wen-Shiang Liao, Toufen Township, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01Q 1/22 (2006.01); H01L 21/027 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 21/683 (2006.01); H01L 23/00 (2006.01); H01L 23/29 (2006.01); H01L 23/31 (2006.01); H01L 23/498 (2006.01); H01L 23/538 (2006.01); H01L 23/66 (2006.01);
U.S. Cl.
CPC ...
H01Q 1/2283 (2013.01); H01L 21/0273 (2013.01); H01L 21/4853 (2013.01); H01L 21/4857 (2013.01); H01L 21/486 (2013.01); H01L 21/565 (2013.01); H01L 21/568 (2013.01); H01L 21/6835 (2013.01); H01L 23/293 (2013.01); H01L 23/3128 (2013.01); H01L 23/3135 (2013.01); H01L 23/49827 (2013.01); H01L 23/49838 (2013.01); H01L 23/5384 (2013.01); H01L 23/5386 (2013.01); H01L 23/66 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 2221/68345 (2013.01); H01L 2221/68359 (2013.01); H01L 2223/6616 (2013.01); H01L 2223/6677 (2013.01);
Abstract

This application relates to a device for signal transmission (e.g., radio frequency transmission) and a method for forming the device. For example, the method includes: depositing an insulating layer that includes polybenzobisoxazole (PBO) on a carrier; forming a backside layer including polyimide (PI) over the adhesive layer; forming a die-attach film (DAF) over the backside layer; forming one or more through-insulator via (TIV)-wall structures and one or more TIV-grating structures on the second backside layer; placing a die, such as a radio frequency (RF) integrated circuit (IC) die, on the DAF; encapsulating the die, the one or more TIV-wall structures, and the one or more TIV-grating structures, with a molding compound to form an antenna package including one or more antenna regions; and forming a redistribution layer (RDL) structure on the encapsulated package. The RDL structure can include one or more antenna structures coupled to the die. Each of the one or more antenna structures can be positioned over the one or more antenna regions.


Find Patent Forward Citations

Loading…