The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 23, 2025

Filed:

Jun. 20, 2022
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Ruilong Xie, Niskayuna, NY (US);

Albert M. Chu, Nashua, NH (US);

Albert M. Young, Fishkill, NY (US);

Brent A. Anderson, Jericho, VT (US);

Junli Wang, Slingerlands, NY (US);

Ravikumar Ramachandran, Pleasantville, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/07 (2006.01); H01L 21/02 (2006.01); H10D 62/10 (2025.01); H10D 64/01 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 88/00 (2025.01);
U.S. Cl.
CPC ...
H01L 25/071 (2013.01); H01L 21/02507 (2013.01); H01L 21/02603 (2013.01); H10D 62/121 (2025.01); H10D 64/017 (2025.01); H10D 84/0158 (2025.01); H10D 84/038 (2025.01); H10D 88/01 (2025.01);
Abstract

A microelectronic structure including a plurality of lower transistors and a plurality of upper transistor, where each of the plurality of lower transistors and the plurality of upper transistors includes a plurality of channel. Where an upper center vertical axis of each of the plurality of upper transistors is staggered from a lower center vertical axis of each of the lower transistors. A lower gate cut is located between each of the plurality of lower transistors. A first upper gate cut located adjacent to a first upper transistor of the plurality of upper transistors, where the first upper gate cut is in direct contact with a plurality of first channels of the first upper transistor.


Find Patent Forward Citations

Loading…