The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 23, 2025

Filed:

Aug. 09, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Tzu-Yu Lin, Taoyuan, TW;

Yao-Wen Chang, Taipei, TW;

Chia-Wen Zhong, Taichung, TW;

Yen-Liang Lin, Yilan County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/3213 (2006.01); H01L 23/522 (2006.01); H10H 29/10 (2025.01);
U.S. Cl.
CPC ...
H01L 24/20 (2013.01); H01L 21/32139 (2013.01); H01L 23/5226 (2013.01); H01L 24/13 (2013.01); H01L 24/19 (2013.01); H10H 29/10 (2025.01); H01L 2224/13019 (2013.01); H01L 2224/2101 (2013.01);
Abstract

Various embodiments of the present disclosure are directed towards an integrated chip. The integrated chip includes an interconnect structure overlying a semiconductor substrate and comprising a conductive wire. A passivation structure overlies the interconnect structure. An upper conductive structure overlies the passivation structure and comprises a first conductive layer, a dielectric layer, and a second conductive layer. The first conductive layer is disposed between the dielectric layer and the passivation structure. The second conductive layer extends along a top surface of the dielectric layer and penetrates through the first conductive layer and the passivation structure to the conductive wire.


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