The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 23, 2025

Filed:

Jan. 12, 2023
Applicant:

Changxin Memory Technologies, Inc., Hefei, CN;

Inventor:

Yulei Wu, Hefei, CN;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/532 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 23/522 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H01L 23/5329 (2013.01); H01L 21/7682 (2013.01); H01L 21/76831 (2013.01); H01L 23/5226 (2013.01); H01L 23/53214 (2013.01); H01L 23/564 (2013.01); H10B 12/50 (2023.02);
Abstract

The present disclosure provides a semiconductor structure and a semiconductor device. The semiconductor structure includes a first conductive layer, a first barrier layer, and an insulating layer. The first conductive layer includes at least two traces, and a recess is formed between two adjacent ones of the traces. The first barrier layer is provided on a sidewall of the recess. The insulating layer fills the recess, and an air gap is formed in the insulating layer located in the recess.


Find Patent Forward Citations

Wu, Yulei. (2025). Semiconductor structure and semiconductor device (U.S. Patent No. 12424555). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12424555

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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