The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 23, 2025

Filed:

Mar. 29, 2021
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Jordan D. Greenlee, Boise, ID (US);

Rita J. Klein, Boise, ID (US);

Everett Allen Mcteer, Eagle, ID (US);

John Hopkins, Meridian, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/535 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01); H10B 41/27 (2023.01); H10B 43/27 (2023.01);
U.S. Cl.
CPC ...
H01L 23/53257 (2013.01); H01L 21/76805 (2013.01); H01L 21/76895 (2013.01); H01L 23/535 (2013.01); H10B 41/27 (2023.02); H10B 43/27 (2023.02);
Abstract

Some embodiments include apparatuses and methods of forming the apparatuses. One of the apparatuses includes a first dielectric material; a second dielectric material separated from the first dielectric material; a memory cell string including a pillar extending through the first and second dielectric materials, the pillar including a portion between the first and second dielectric materials; and a tungsten material located between the first and second dielectric materials and separated from the portion of the pillar and the first and second dielectric materials by an additional dielectric material. The additional dielectric material has a dielectric constant greater than a dielectric constant of silicon dioxide. The additional dielectric material contacts the portion of the pillar and the tungsten material.


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