The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2025
Filed:
Aug. 10, 2023
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/4076 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H01L 23/5283 (2013.01); G11C 11/4076 (2013.01); H01L 23/5226 (2013.01); H10B 12/315 (2023.02); H10B 12/482 (2023.02); H10B 12/488 (2023.02);
Abstract
A memory device includes a plurality of memory cells. Each of the plurality of memory cells includes a capacitor configured to store an amount of electrical charges, and a plurality of transistors electrically coupled to the capacitor. Based on a pulse signal, a first subset of the plurality of transistors are configured to form a first conduction path, and a second subset of the plurality of transistors are configured to form a second conduction path. The amount of electrical charges is configured to be altered through the first conduction path and the second conduction path.