The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2025
Filed:
Jun. 18, 2021
Applicant:
Intel Ndtm Us Llc, Santa Clara, CA (US);
Inventors:
Vijay Saradhi Mangu, Albuquerque, NM (US);
David Meyaard, Boise, ID (US);
Randy Koval, Albuquerque, NM (US);
Krishna Parat, Palo Alto, CA (US);
Assignee:
INTEL NDTM US LLC, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/311 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01); H10B 41/27 (2023.01); H10B 41/41 (2023.01); H10B 43/27 (2023.01); H10B 43/40 (2023.01);
U.S. Cl.
CPC ...
H01L 21/7682 (2013.01); H01L 21/31111 (2013.01); H01L 21/31144 (2013.01); H01L 21/76877 (2013.01); H01L 23/5226 (2013.01); H01L 23/5329 (2013.01); H10B 41/27 (2023.02); H10B 41/41 (2023.02); H10B 43/27 (2023.02); H10B 43/40 (2023.02);
Abstract
An embodiment of a memory device may comprise a vertical channel, a first memory cell formed on the vertical channel, a first wordline coupled to the first memory cell, a second memory cell formed on the vertical channel immediately above the first memory cell, a second wordline coupled to the second memory cell, and an airgap disposed between the first wordline and the second wordline. Other embodiments are disclosed and claimed.