The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2025
Filed:
May. 24, 2023
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Wensheng Xu, Shanghai, CN;
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Abstract
The present application provides a method for reducing contact resistance. The contact holes of a gate structure comprising: metal gates, a source and drain structure located between the metal gates, a recess formed by using the outer side wall of the metal gates as a side wall and the upper surface of the source and drain structure as a bottom; a silicon nitride layer provided at the bottom of the recess; an oxide provided within the recess; a silicon oxide layer covering contact holes, contact holes are connected with the source and drain structure and the metal gate, respectively; Ti and TiN are deposited on the surfaces of the contact holes to form a Co seed layer; Co fills inside the contact holes; and Ti at the bottoms of the contact holes reacts with silicon in the source and drain structure to form TiSi.