Plasma processing apparatus and semiconductor device manufacturing method

Abstract

A plasma processing apparatus includes a chamber having an upper wall with a plurality of through holes and a lower wall with an exhaust hole, the chamber defining a plasma processing space; a substrate stage disposed within the chamber, the substrate stage having a seating surface, wherein a substrate is seated on the seating surface; a baffle plate disposed between the upper wall and the substrate stage, the baffle plate having gas distribution holes; a gas supply configured to supply gas into the chamber through the through holes; a pumping device having an exhaust pipe, the exhaust pipe connected to the exhaust hole to control pressure inside the chamber; and a plasma generator configured to generate a first plasma using the gas supplied into the chamber through at least one of the through holes formed in the upper wall.