The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 23, 2025

Filed:

Jun. 10, 2024
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Bruce A. Liikanen, Berthoud, CO (US);

Larry J. Koudele, Erie, CO (US);

Michael Sheperek, Longmont, CO (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/34 (2006.01); G11C 5/04 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3404 (2013.01); G11C 5/04 (2013.01); G11C 11/5628 (2013.01); G11C 11/5642 (2013.01); G11C 16/3459 (2013.01); G11C 2211/5623 (2013.01); G11C 2211/5624 (2013.01); G11C 2211/5625 (2013.01);
Abstract

A processing device determines a plurality of computing error metrics that are indicative of operational characteristics between programming distributions within the memory device. The processing device performs a program targeting operation on a memory cell of the memory device to calibrate one or more program verify (PV) targets associated with the programming distributions. Performing the program targeting operation comprises the processing device selecting a rule from a predefined set of rules based on the plurality of computing error metrics, wherein the predefined set of rules corresponds to an adjusting of a PV target of a last programming distribution. In addition, the processing device adjusts, based on the selected rule, the one or more PV targets of a plurality of PV targets associated with the programming distributions, wherein the one or more PV targets correspond to one or more respective voltage values for programming memory cells of the memory device.


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