The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 23, 2025

Filed:

Feb. 10, 2022
Applicants:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Tsmc Nanjing Company, Limited, Nanjing, CN;

Inventors:

Huaixin Xian, Hsinchu, TW;

Zhang-Ying Yan, Hsinchu, TW;

Jibao Zhang, Hsinchu, TW;

Qingchao Meng, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); G06F 30/392 (2020.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
G06F 30/392 (2020.01); H01L 21/768 (2013.01); H01L 23/5226 (2013.01);
Abstract

A current-distributing structure in an integrated circuit (IC) includes a substrate; and first and second active regions on the substrate. First and second sets of gate structures correspondingly overlap the first and second active regions. A first conductive structure in a first metallization layer overlaps the first active region and is electrically coupled to the first set of gate structures. A second conductive structure in the first metallization layer overlaps the second active region and is electrically coupled to the second set of gate structures. A third conductive structure in a second metallization layer is electrically coupled to the first and the second conductive structures.


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