The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 23, 2025

Filed:

Nov. 08, 2023
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Sridhar Prudviraj Gunda, Bangalore, IN;

Amiya Banerjee, Bangalore, IN;

Ritesh Tiwari, Bangalore, IN;

Shreesha Prabhu, Singapore, SG;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 3/06 (2006.01); G06F 12/02 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0611 (2013.01); G06F 3/0656 (2013.01); G06F 3/0659 (2013.01); G06F 3/0673 (2013.01); G06F 12/0246 (2013.01); G06F 2212/7205 (2013.01);
Abstract

Methods, systems, and devices for an erase operation for a memory system are described. The memory system may perform, on a block of memory cells, a first portion of an erase operation. After performing the first portion of the erase operation, the memory system may receive a write command to write data to the block of memory cells. In response to receiving the write command, the memory system may determine whether a threshold voltage of the block of memory cells satisfies a threshold. In response to determining the that the threshold voltage satisfies the threshold, the memory system may perform a second portion of the erase operation on the block of memory cells. As such, the memory system may write the data to the block of memory cells in response to performing the second portion of the erase operation.


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