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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12421603 B1

PDFFull Text
Date of Patent:
Sep. 23, 2025

Filed:

Oct. 03, 2019

Composition for high temperature atomic layer deposition of high quality silicon oxide thin films

Applicant:

Versum Materials Us, Llc, Tempe, AZ (US);

Inventors:

Meiliang Wang, Tempe, AZ (US);

Xinjian Lei, Vista, CA (US);

Madhukar B. Rao, Carlsbad, CA (US);

Assignee:

Versum Materials US, LLC, Tempe, AZ (US);

Attorneys:

David K. Benson

Versum Materials US, LLC

Primary Examiner:

Cachet I Proctor

Int. Cl.
CPC ...
C23C 16/40 (2006.01); C01B 33/113 (2006.01); C23C 16/44 (2006.01); C23C 16/455 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45553 (2013.01); C01B 33/113 (2013.01); C23C 16/402 (2013.01); C23C 16/4408 (2013.01); H01L 21/02164 (2013.01); H01L 21/02211 (2013.01); H01L 21/0228 (2013.01); C01P 2006/40 (2013.01);
Abstract

Atomic layer deposition (ALD) process formation of silicon oxide with temperature >600° C. is disclosed. Silicon precursors used have a formula of: I.RRSi(NRR)wherein R, R, and Rare each independently selected from a linear or branched Cto Calkyl group, and a Cto Caryl group; Ris selected from hydrogen, a linear or branched Cto Calkyl group, and a Cto Caryl group, a Cto Calkylsilyl group; wherein Rand Rare linked to form a cyclic ring structure or Rand Rare not linked to form a cyclic ring structure; m is 0 to 2; n is 1 to 3; and m+n=3.

Find Patent Forward Citations

Wang, Meiliang. (2025). Composition for high temperature atomic layer deposition of high quality silicon oxide thin films (U.S. Patent No. 12421603). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12421603

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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