The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2025
Filed:
Oct. 03, 2019
Applicant:
Versum Materials Us, Llc, Tempe, AZ (US);
Inventors:
Assignee:
Versum Materials US, LLC, Tempe, AZ (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/40 (2006.01); C01B 33/113 (2006.01); C23C 16/44 (2006.01); C23C 16/455 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45553 (2013.01); C01B 33/113 (2013.01); C23C 16/402 (2013.01); C23C 16/4408 (2013.01); H01L 21/02164 (2013.01); H01L 21/02211 (2013.01); H01L 21/0228 (2013.01); C01P 2006/40 (2013.01);
Abstract
Atomic layer deposition (ALD) process formation of silicon oxide with temperature >600° C. is disclosed. Silicon precursors used have a formula of: I.RRSi(NRR)wherein R, R, and Rare each independently selected from a linear or branched Cto Calkyl group, and a Cto Caryl group; Ris selected from hydrogen, a linear or branched Cto Calkyl group, and a Cto Caryl group, a Cto Calkylsilyl group; wherein Rand Rare linked to form a cyclic ring structure or Rand Rare not linked to form a cyclic ring structure; m is 0 to 2; n is 1 to 3; and m+n=3.