The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2025
Filed:
Jan. 06, 2023
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 84/85 (2025.01); H10D 30/01 (2025.01); H10D 30/43 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 88/00 (2025.01);
U.S. Cl.
CPC ...
H10D 84/85 (2025.01); H10D 84/017 (2025.01); H10D 84/0186 (2025.01); H10D 84/038 (2025.01); H10D 88/01 (2025.01);
Abstract
In an embodiment, a device includes: a dielectric wall; nanostructures abutting the dielectric wall; a lower source/drain region adjoining a lower subset of the nanostructures; an upper source/drain region adjoining an upper subset of the nanostructures, the upper source/drain region oppositely doped from the lower source/drain region; and a shared source/drain contact contacting the upper source/drain region and the lower source/drain region, the shared source/drain contact extending into the dielectric wall.