The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 16, 2025

Filed:

Feb. 01, 2022
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Ralf Siemieniec, Villach, AT;

Ingo Muri, Villach, AT;

Till Schloesser, Munich, DE;

Hans-Joachim Schulze, Taufkirchen, DE;

Olaf Storbeck, Dresden, DE;

Assignee:

INFINEON TECHNOLOGIES AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 64/66 (2025.01); H01L 25/07 (2006.01); H10D 30/60 (2025.01); H10D 64/01 (2025.01);
U.S. Cl.
CPC ...
H10D 64/665 (2025.01); H01L 25/072 (2013.01); H10D 30/60 (2025.01); H10D 64/01 (2025.01);
Abstract

A transistor device is provided. In an example, the transistor device includes a semiconductor body having a first main surface, a second main surface opposite to the first main surface. The transistor device further includes a transistor cell array including a plurality of transistor cells. The transistor cell array includes a first load electrode over the first main surface. The first load electrode is electrically connected to the plurality of transistor cells. The transistor cell array further includes a second load electrode over the second main surface. The second load electrode is electrically connected to the plurality of transistor cells. The plurality of transistor cells includes at least one control electrode including carbon.


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