The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2025
Filed:
Nov. 08, 2023
Applicant:
United Microelectronics Corp., Hsinchu, TW;
Inventors:
Chih-Jung Chen, Hsinchu County, TW;
Yu-Jen Yeh, Taichung, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H10B 41/30 (2023.01); H10D 30/68 (2025.01); H10D 64/01 (2025.01); H10D 64/66 (2025.01); H01L 21/3105 (2006.01);
U.S. Cl.
CPC ...
H10D 64/035 (2025.01); H01L 21/76224 (2013.01); H10B 41/30 (2023.02); H10D 30/68 (2025.01); H10D 64/015 (2025.01); H10D 64/679 (2025.01); H01L 21/31051 (2013.01);
Abstract
A structure of flash memory cell includes a substrate. A floating gate is disposed on the substrate. A low dielectric constant (low-K) spacer is disposed on a sidewall of the floating gate. A trench isolation structure has a base part disposed in the substrate and a protruding part above the substrate protruding from the base part. The low-K spacer is sandwiched between the floating gate and the protruding part of the trench isolation structure.