The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 16, 2025

Filed:

May. 23, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Kuo-Pin Chang, Hsinchu, TW;

Kuo-Ching Huang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 63/00 (2023.01); G11C 5/06 (2006.01); H10N 70/20 (2023.01); H10N 70/00 (2023.01);
U.S. Cl.
CPC ...
H10B 63/845 (2023.02); G11C 5/063 (2013.01); H10B 63/30 (2023.02); H10N 70/231 (2023.02); H10N 70/021 (2023.02);
Abstract

A cell array of a memory device includes: a first deck of memory cells arranged in a first row and a second row extending in a first horizontal direction and a plurality of columns extending in a second horizontal direction, wherein the memory cells in the second row in the first deck is displaced in the first horizontal direction with respect to the memory cells in the first row in the first deck; a first common word line metal track extending in the first horizontal direction, wherein both the memory cells in the first row and the memory cells in the second row are disposed on the first common word line metal track; and a plurality of first bit line metal tracks extending in the second horizontal direction, wherein each of the plurality of first bit line metal tracks is disposed on one of the first deck of memory cells.


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