The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 16, 2025

Filed:

Jul. 05, 2022
Applicants:

Changxin Memory Technologies, Inc., Hefei, CN;

Beijing Superstring Academy of Memory Technology, BeiJing, CN;

Inventors:

Xiaoguang Wang, Hefei, CN;

Dinggui Zeng, Hefei, CN;

Huihui Li, Hefei, CN;

Kanyu Cao, Hefei, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10B 61/00 (2023.01); H10N 50/01 (2023.01);
U.S. Cl.
CPC ...
H10B 61/22 (2023.02); H10N 50/01 (2023.02);
Abstract

A semiconductor structure, a manufacturing method therefor and a memory are provided. The semiconductor structure may at least include: a plurality of aligned transistors, in which the transistors share a same source plate, channels of the transistors are located above the source plate, the channel length direction of the transistors is perpendicular to a surface of the source plate, and a material of the channels includes a single crystal semiconductor; a plurality of drain contacts, electrically connected with drains of the transistors, in which even number of the transistors share one same drain contact; and a plurality of magnetic tunnel junctions, located on the drain contacts and electrically connected with the drain contacts in one-to-one correspondence.


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