The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2025
Filed:
Dec. 07, 2021
Changxin Memory Technologies, Inc., Hefei, CN;
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Abstract
Provided is a method for forming a storage node contact structure and a semiconductor structure. The method for forming a storage node contact structure comprises: providing a substrate, bit line structures being formed on a surface of the substrate and contact holes being formed between the bit line structures; and growing silicon crystal in the contact holes and adding a doping source in a growth process, in which a doping concentration of the doping source when the growth is over is greater than a doping concentration when the growth is started so as to form silicon crystal gradual change structures in the contact holes, in which the silicon crystal changes from monocrystalline silicon to heavily doped polycrystalline silicon.