The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2025
Filed:
Nov. 01, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Seok Hyun Kim, Incheon, KR;
Young Sin Kim, Hwaseong-si, KR;
Dong Sik Park, Suwon-si, KR;
Jong Min Lee, Hwaseong-si, KR;
Joon Yong Choe, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A semiconductor device comprises a substrate comprising a cell region; a cell region isolation film in the substrate and extending along an outer edge of the cell region; a bit-line structure on the substrate and in the cell region, wherein the bit-line structure has a distal end positioned on the cell region isolation film; a cell spacer on a vertical side surface of the distal end of the bit-line structure; an etching stopper film extending along a side surface of the cell spacer and a top face of the cell region isolation film; and an interlayer insulating film on the etching stopper film, and on the side surface of the cell spacer, wherein the interlayer insulating film includes silicon nitride.