The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2025
Filed:
Jan. 12, 2022
Changxin Memory Technologies, Inc., Hefei, CN;
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Abstract
A forming method of a semiconductor structure includes: providing a substrate including an array area and a peripheral area; forming a first insulating dielectric layer in the array area and the peripheral area at the same time, and etching the first insulating dielectric layer and the component dielectric layer in the array area; filling the plurality of trenches; performing back etching on the reference isolation structure and the first insulating dielectric layer; forming a second insulating dielectric layer in the array area and the peripheral area; patterning the second insulating dielectric layer; removing the first insulating dielectric layer in the array area; and removing the second insulating dielectric layer to form a contact material in the contact window.