The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2025
Filed:
Jun. 02, 2022
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Tsung-Chieh Hsiao, Changhua County, TW;
Chih Hsin Yang, Hsinchu County, TW;
Liang-Wei Wang, Hsinchu, TW;
Dian-Hau Chen, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/00 (2006.01); H01L 23/00 (2006.01); H01L 23/48 (2006.01); H01L 25/065 (2023.01);
U.S. Cl.
CPC ...
H01L 25/50 (2013.01); H01L 23/481 (2013.01); H01L 24/08 (2013.01); H01L 24/80 (2013.01); H01L 25/0657 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/80006 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06582 (2013.01); H01L 2225/06589 (2013.01);
Abstract
A semiconductor structure and processes of forming the same are provided. A semiconductor structure according to the present disclosure includes a first die having a front surface and a back surface and a second die bonded to the back surface of the first die. The first die includes a plurality of trenches adjacent the back surface and the plurality of trenches are filled with a liquid.