The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 16, 2025

Filed:

Feb. 08, 2022
Applicant:

Changxin Memory Technologies, Inc., Hefei, CN;

Inventor:

Luguang Wang, Hefei, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/552 (2006.01); H01L 21/768 (2006.01); H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
H01L 23/552 (2013.01); H01L 21/76831 (2013.01); H01L 21/76898 (2013.01); H01L 23/481 (2013.01);
Abstract

A semiconductor structure includes: a base, including a substrate and a dielectric layer, the substrate being provided with a first front surface and a first back surface which are opposite, and the dielectric layer being located at the first front surface; a connecting hole, penetrating through the substrate and extending into the dielectric layer; a first insulating layer, located at the surface of an inner wall of the connecting hole; a protective barrier layer, located at the surface of the first insulating layer and grounded; a second insulating layer, located at the surface of the protective barrier layer; and a connecting structure, located at the surface of the second insulating layer and filling up the connecting hole.


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