The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2025
Filed:
Aug. 31, 2022
Commissariat Á L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Universite Grenoble Alpes, Saint Martin d'Heres, FR;
Fabrice Nemouchi, Grenoble, FR;
Thierry Farjot, Grenoble, FR;
Frédéric Gustavo, Grenoble, FR;
François Lefloch, Grenoble, FR;
Tom Doekle Vethaak, Grenoble, FR;
Commissariat a l'Energie Atomique et aux Energies Alternatives, Paris, FR;
UNIVERSITE GRENOBLE ALPES, Saint Martin d'Heres, FR;
Abstract
A method for producing a superconducting vanadium silicide on a silicon layer includes treating a face of the silicon layer in order to prepare it for a deposition of vanadium silicide, then depositing a vanadium silicide layer on the prepared face of the silicon layer in order to obtain a stack of a vanadium silicide layer directly deposited on the silicon layer, then an annealing the stack which increases the critical temperature of the vanadium silicide deposited. The treating includes an operation of incorporation of argon atoms in the silicon layer through the face of the silicon layer.