The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2025
Filed:
Oct. 27, 2023
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Yu-Chung Lien, San Jose, CA (US);
Joshua Garrison, Folsom, CA (US);
Zhenming Zhou, San Jose, CA (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); G11C 16/08 (2006.01); G11C 16/10 (2006.01); G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
G11C 16/102 (2013.01); G11C 16/08 (2013.01); G11C 16/349 (2013.01);
Abstract
A processing device is operatively coupled to an array of memory cells. The processing device determines that a media endurance metric value for a string of the array of memory cells satisfies a first threshold criterion based on a first threshold value. The processing device further controls, based on the media endurance metric value, a ramp rate of a program pulse applied to a wordline of the string.
Lien, Yu-Chung. (2025). Single-level cell programming with adaptive wordline ramp rate (U.S. Patent No. 12417808). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12417808
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile