The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2025
Filed:
Jun. 21, 2023
Applicant:
Globalfoundries U.s. Inc., Malta, NY (US);
Inventor:
Yusheng Bian, Ballston Lake, NY (US);
Assignee:
GlobalFoundries U.S. Inc., Malta, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/122 (2006.01); G02F 1/015 (2006.01); G02F 1/035 (2006.01); G02F 1/313 (2006.01);
U.S. Cl.
CPC ...
G02F 1/0154 (2021.01); G02B 6/1226 (2013.01); G02F 1/035 (2013.01); G02F 1/3132 (2013.01); G02F 2201/063 (2013.01); G02F 2202/20 (2013.01); G02F 2203/10 (2013.01);
Abstract
Plasmonic photonic structures that include a layer that exhibits an electric-field-induced Pockels effect and methods of forming such structures. The structure comprises a waveguide core on a substrate, a first layer that has an overlapping relationship with the first waveguide core, and a second layer that has an overlapping relationship with the first waveguide core and the first layer. The first layer comprises a metal, and the second layer comprising a material that exhibits an electric-field-induced Pockels effect.