The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 16, 2025

Filed:

Dec. 06, 2022
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Rutger Meyer Timmerman Thijssen, Sunnyvale, CA (US);

Guannan Chen, Belmont, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 1/00 (2006.01); F21V 8/00 (2006.01); G02B 5/18 (2006.01); G02B 6/122 (2006.01); G02B 6/136 (2006.01); G02B 6/42 (2006.01); G02B 27/00 (2006.01); G02B 6/124 (2006.01); G02B 27/01 (2006.01);
U.S. Cl.
CPC ...
G02B 6/122 (2013.01); G02B 1/002 (2013.01); G02B 5/1814 (2013.01); G02B 5/1866 (2013.01); G02B 6/0016 (2013.01); G02B 6/136 (2013.01); G02B 6/4204 (2013.01); G02B 27/0081 (2013.01); G02B 6/124 (2013.01); G02B 27/0172 (2013.01);
Abstract

An optical device and a method of forming an optical device having multi-depth optical device structures with a refractive index greater than or equal to 2.0 are provided. The optical devices and method include forming first matrix stack structures and second matrix stack structures. Adjacent first matrix stack structures form first vias having a first depth and adjacent second matrix stack structures form second vias having a second depth. The first depth of the first vias being different than the second depth of the second vias provides from the formation of submicron, multi-depth optical device structures when the vias are backfilled with a device material.


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