The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2025
Filed:
May. 24, 2022
University-industry Cooperation Group of Kyung Hee University, Yongin-si, KR;
UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY, Yongin-si, KR;
Abstract
Disclosed is a method of fabricating a Janus transition metal dichalcogenide thin film. More particularly, the method includes a first step of depositing a transition metal dichalcogenide thin film including a first chalcogen element on an oxide silicon substrate; a second step of a vacancy forming in the transition metal dichalcogenide thin film; and a third step of substituting the first chalcogen element with a second chalcogen element to form a Janus transition metal dichalcogenide thin film. The first step, the second step, and the third step may be performed in a single CVD process in a same reaction chamber. Therefore, the present disclosure can shorten the processing time of a Janus transition metal dichalcogenide thin film and can reduce the manufacturing cost thereof. In addition, the present disclosure can minimize damage to the Janus transition metal dichalcogenide thin film during the fabrication process, thereby being capable of a high-quality single-crystal Janus transition metal dichalcogenide thin film.