The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2025
Filed:
May. 13, 2022
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Jia-Rong Wu, Kaohsiung, TW;
Chi-Hsuan Cheng, Kaohsiung, TW;
Rai-Min Huang, Taipei, TW;
Po-Kai Hsu, Tainan, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 52/01 (2023.01); H10B 61/00 (2023.01); H10N 52/00 (2023.01); H10N 52/80 (2023.01);
U.S. Cl.
CPC ...
H10N 52/01 (2023.02); H10B 61/00 (2023.02); H10N 52/00 (2023.02); H10N 52/80 (2023.02);
Abstract
A method for fabricating semiconductor device includes the steps of first forming a magnetic tunneling junction (MTJ) on a substrate, forming a first spin orbit torque (SOT) layer on the MTJ, forming an inter-metal dielectric (IMD) layer around the first SOT layer, forming a second SOT layer on the IMD layer, forming a first hard mask on the second SOT layer, patterning the first hard mask along a first direction, and then patterning the first hard mask along a second direction.