The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2025
Filed:
Mar. 21, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
Some implementations described herein provide techniques and apparatuses for forming insulator layers in or on a semiconductor substrate prior to forming epitaxial layers within source/drain regions of a fin field-effect transistor. The epitaxial layers may be formed over the insulator layers to reduce electron tunneling between the source/drain regions of the fin field-effect transistor. In this way, a likelihood of leakage into the semiconductor substrate and/or between the source/drain regions of the fin field-effect transistor is reduced.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile