The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2025
Filed:
Mar. 05, 2021
Applicant:
Enkris Semiconductor, Inc., Jiangsu, CN;
Assignee:
ENKRIS SEMICONDUCTOR, INC., Jiangsu, CN;
Primary Examiner:
Int. Cl.
CPC ...
H10D 8/75 (2025.01); H10D 8/01 (2025.01); H10D 62/85 (2025.01); H10H 20/816 (2025.01);
U.S. Cl.
CPC ...
H10D 8/755 (2025.01); H10D 8/053 (2025.01); H10D 62/8503 (2025.01); H10H 20/8162 (2025.01);
Abstract
The present disclosure provides a resonant tunneling diode including: a first barrier layer; a second barrier layer; a potential well layer between the first barrier layer and the second barrier layer, materials of the first barrier layer, the second barrier layer, and the potential well layer including a group III nitride, a material of the potential well layer including a gallium element; a first barrier layer between the first barrier layer and the potential well layer; and/or a second barrier layer between the second barrier layer and the potential well layer.