The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2025
Filed:
Mar. 20, 2023
Applicant:
Spts Technologies Limited, Newport, GB;
Inventors:
Weikang Fan, Newport, GB;
Adam S. Beachey, Newport, GB;
Assignee:
SPTS Technologies Limited, Newport, GB;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/306 (2006.01); H01L 21/3065 (2006.01); G02B 6/12 (2006.01); G02B 6/136 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/30621 (2013.01); H01L 21/3065 (2013.01); G02B 2006/12078 (2013.01); G02B 6/136 (2013.01); H01J 37/32082 (2013.01); H01J 37/3244 (2013.01); H01J 2237/334 (2013.01);
Abstract
A method of plasma etching an indium-containing compound semiconductor substrate and plasma etch apparatus for plasma etching an indium-containing semiconductor substrate can use a primary plasma etching process and a secondary plasma etching process. The primary plasma etching process uses a halogen-containing component and a nitrogen-containing component. The secondary plasma etching process uses an oxygen-containing component.