The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2025
Filed:
Jul. 08, 2022
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Roy E. Meade, Boise, ID (US);
Sumeet C. Pandey, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/268 (2006.01); H01L 21/02 (2006.01); H01L 21/428 (2006.01); H01L 21/477 (2006.01); H10D 62/10 (2025.01);
U.S. Cl.
CPC ...
H01L 21/268 (2013.01); H01L 21/02521 (2013.01); H01L 21/02568 (2013.01); H01L 21/0259 (2013.01); H01L 21/02675 (2013.01); H01L 21/428 (2013.01); H01L 21/477 (2013.01); H10D 62/118 (2025.01);
Abstract
A method of forming a semiconductor device structure comprises forming at least one 2D material over a substrate. The at least one 2D material is treated with at least one laser beam having a frequency of electromagnetic radiation corresponding to a resonant frequency of crystalline defects within the at least one 2D material to selectively energize and remove the crystalline defects from the at least one 2D material. Additional methods of forming a semiconductor device structure, and related semiconductor device structures, semiconductor devices, and electronic systems are also described.