The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2025
Filed:
Nov. 22, 2022
Tokyo Electron Limited, Tokyo, JP;
Michael Murphy, Albany, NY (US);
Charlotte Cutler, Albany, NY (US);
David Conklin, Saratoga Springs, NY (US);
Toyko Electron Limited, Tokyo, JP;
Abstract
In certain embodiments, a method includes forming, by photolithography on a semiconductor wafer, first patterned features (PFs) including first photoresist structures (PRSs) having a first width and first recesses having a second width less than the first width and greater than a target width; forming, via anti-spacer patterning processing, second PFs including second PRSs having a third width less than the first width, first overcoat structures (OCSs) of the second width interspersed between second PRSs, and second recesses having a fourth width less than the target width; and forming, via acid diffusion processing, third PFs including third PRSs having a fifth width, second OCSs of the target width interspersed between third PRSs, and third recesses defined by third PRSs and second OCSs and having a sixth width greater than the fourth width, portions of first OCSs having been selectively removed using the acid diffusion processing to form second OCSs.