The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 09, 2025

Filed:

Jun. 18, 2024
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chen-Yu Lee, Hsinchu, TW;

Yen-Yu Chen, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/02 (2006.01); C23C 14/02 (2006.01); C23C 14/14 (2006.01); C23C 14/56 (2006.01); C23C 14/58 (2006.01); C23C 16/06 (2006.01); C23C 16/56 (2006.01); H01J 37/32 (2006.01); H01L 21/02 (2006.01); H10D 64/01 (2025.01);
U.S. Cl.
CPC ...
C23C 16/0245 (2013.01); C23C 14/021 (2013.01); C23C 14/14 (2013.01); C23C 14/566 (2013.01); C23C 14/5873 (2013.01); C23C 16/06 (2013.01); C23C 16/56 (2013.01); H01J 37/32743 (2013.01); H01J 37/32788 (2013.01); H01J 37/32899 (2013.01); H01L 21/0206 (2013.01); H01L 21/02068 (2013.01); H10D 64/01 (2025.01); H01J 37/321 (2013.01); H01J 37/32357 (2013.01); H01J 2237/335 (2013.01);
Abstract

Semiconductor processing apparatuses and methods are provided in which a pre-clean chamber receives a semiconductor wafer from a metal gate layer deposition chamber and at least partially removes an oxide layer on a metal gate layer. In some embodiments, a semiconductor processing apparatus includes a plurality of metal gate layer deposition chambers. Each of the metal gate layer deposition chambers is configured to form a metal gate layer on a semiconductor wafer. At least one pre-clean chamber of the apparatus is configured to receive the semiconductor wafer from one of the metal gate layer deposition chamber and at least partially remove an oxide layer on the metal gate layer.


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