The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2025
Filed:
Jun. 16, 2022
Applicant:
Taiwan Semiconductor Manufacturing Company Limited, Hsin-Chu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Company Limited, Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 39/00 (2025.01); H10D 84/80 (2025.01); H10F 39/18 (2025.01);
U.S. Cl.
CPC ...
H10F 39/807 (2025.01); H10F 39/014 (2025.01); H10F 39/18 (2025.01); H10F 39/8067 (2025.01);
Abstract
A semiconductor structure includes a first shallow trench isolation (STI) structure within a semiconductor substrate. The first STI structure includes a buffer structure, an adhesion structure, an electromagnetic reflection structure, and a fill structure. The adhesion structure is between and adhesively bonded to the buffer structure and the electromagnetic reflection structure. The electromagnetic reflection structure is between the adhesion structure and the fill structure to reflect electromagnetic radiation.