The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2025
Filed:
Dec. 03, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chung-Hui Chen, Hsinchu, TW;
Tzu-Ching Chang, Dali, TW;
Weichih Chen, Hsinchu, TW;
Wan-Te Chen, Danshui Township, TW;
Tsung-Hsin Yu, Hsinchu, TW;
Cheng-Hsiang Hsieh, Taipei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
An integrated circuit (IC) including a plurality of finfet cells designed with digital circuit design rules to provide smaller finfet cells with decreased cell heights, and analog circuit cell structures including first finfet cells of the plurality of finfet cells and including at least one cut metal layer. The smaller finfet cells with decreased cell heights provide a first shorter metal track in one direction and the at least one cut metal layer provides a second shorter metal track in another direction to increase maximum electromigration currents in the integrated circuit.