The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2025
Filed:
Jan. 05, 2022
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A semiconductor device includes a first device over a substrate, wherein the first device includes a gate stack including a gate electrode material; a source/drain region in the substrate adjacent the gate stack; a first isolation region surrounding the gate stack; a gate contact over and contacting the gate stack, wherein the gate contact includes a gate contact material; and a second isolation region surrounding the gate contact; and a second device over the substrate, wherein the second device includes a first parallel capacitor including first electrodes, wherein the first electrodes include the gate electrode material, wherein the first isolation region separates the first electrodes; and a second parallel capacitor over the first parallel capacitor, wherein the second parallel capacitor includes second electrodes connected to the first electrodes, wherein the second electrodes include the gate contact material, wherein adjacent second electrodes are separated by the second isolation region.