The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2025
Filed:
Jun. 18, 2024
Applicant:
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Inventors:
Ying-Chih Chen, Hsinchu, TW;
Blanka Magyari-Kope, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10D 64/68 (2025.01); H10D 1/68 (2025.01); H10D 30/69 (2025.01); H10D 64/01 (2025.01);
U.S. Cl.
CPC ...
H10D 64/685 (2025.01); H10D 1/682 (2025.01); H10D 1/692 (2025.01); H10D 1/696 (2025.01); H10D 30/701 (2025.01); H10D 64/033 (2025.01); H10D 64/689 (2025.01);
Abstract
A device includes a gate stack and a channel layer over the gate stack. The gate stack includes a metal gate electrode, a ferroelectric layer, and a semiconducting oxide layer disposed between the ferroelectric layer and the metal gate electrode. The semiconducting oxide layer has a thickness between approximately 1 μm and approximately 30 μm.