The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2025
Filed:
Jan. 10, 2023
Changxin Memory Technologies, Inc., Hefei, CN;
Tzung-Han Lee, Hefei, CN;
Chun-Wei Liao, Hefei, CN;
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Abstract
The present disclosure provides a semiconductor structure and a forming method thereof, including: a gate structure is located on a substrate; a plurality of doped regions, located in the substrate, and located at two sides of the gate structure, the doped region includes a first doped region and a second doped region, a concentration of doped ions in the first doped region is greater than a concentration of doped ions in the second doped region, and the first doped region is far from a sidewall of the gate structure; an electrical contact layer, the electrical contact layer is in contact with a sidewall of the first doped region far from the gate structure, and a top surface of the electrical contact layer is higher than a surface of the substrate; and a dielectric layer, the dielectric layer fills a space between the electrical contact layer and the gate structure.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile