Field-effect transistors with heterogenous doped regions in the substrate of a silicon-on-insulator substrate

Abstract

Structures for a field-effect transistor and methods of forming a structure for a field-effect transistor. The structure comprises a silicon-on-insulator substrate including a semiconductor layer, a semiconductor substrate, and a dielectric layer between the semiconductor layer and the semiconductor substrate. The semiconductor substrate includes first and second doped regions, the first doped region has a first conductivity type, and the second doped region has a second conductivity type different from the first conductivity type. The structure further comprises first and second source/drain regions in the semiconductor layer, and a gate structure laterally between the first source/drain region and the second source/drain region. The first source/drain region overlaps with the first doped region, and the second source/drain region overlaps with the second doped region.